کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1785234 1524133 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
MBE grown type-II MWIR and LWIR superlattice photodiodes
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
MBE grown type-II MWIR and LWIR superlattice photodiodes
چکیده انگلیسی

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2–5 μm and 8–12 μm bands. Recent LWIR devices have produced detectivities as high as 8 × 1010 Jones with a differential resistance–area product greater than 6 Ohm cm2 at 80 K with a long wavelength cutoff of approximately 12 μm. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10–11 μm range. MWIR devices have produced detectivities as high as 8 × 1013 Jones with a differential resistance–area product greater than 3 × 107 Ohm cm2 at 80 K with a long wavelength cutoff of approximately 3.7 μm. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2–3 μm range at low temperature and increases to over 60% near room temperature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 50, Issues 2–3, April 2007, Pages 187–190
نویسندگان
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