Study of TIPS-pentacene diode using electrical and electric field induced optical second harmonic generation measurement coupled with I–V and C–V measurements

• TR-EFISHG measurement coupled with the I–V and C–V measurements is capable of probing carrier behaviors and trapping charges.
• Organic semiconductor diodes in ITO/PI/TIPS-pentacene/Au.
• Before and after stress biasing is well accounted for threshold voltage shift.

By using the time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurement system, we studied the current-voltage (I–V) and capacitance-voltage (C–V) characteristics of metal-insulator-organic semiconductor diodes with a structure of indium tin oxide/Polyimide(PI)/6,13-Bis(triisopropylsilylethynyl)-pentacene(TIPS-pentacene)/Au. The TR- EFISHG directly probed the electric field across the TIPS-pentacene layer, and showed evidence of the charge accumulation at the TIPS-pentacene/PI interface region. Results of TR-EFISHG coupled with the I–V and C–V electrical measurements clearly demonstrated the rectifying properties and the threshold voltage shift of the diodes, before and after stress biasing. The results showed that the TR-EFISHG measurement coupled with the I–V and C–V measurements is a very useful way to analyze carrier behaviors and trapping charges of organic semiconductor diodes, even when the electrical property of the organic semiconductor layer is unknown.

Carrier injection process before and after stress biasing in ITO/PI/TIPS-pentacene/Au diode.Figure optionsDownload as PowerPoint slide