کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1798311 | 1524818 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The electron g factor in AlGaN/GaN quantum wells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Considering the Rashba and Zeeman effects, the effective Hamiltonian for electrons in AlGaN/GaN quantum wells (QWs) with the magnetic field is obtained, and the effective transverse and longitudinal g-factor (gâ¥,//) are derived. The small anisotropy of the g factor in bulk wurtzite materials is clearly shown, while the anisotropy in QWs induced by the quantum confined effect is evident. Moreover, the average g factor (g*) depends greatly on the position of the origin along the growth axis (c axis). With increasing well thickness, both g⥠and g// increase, and the g-factor anisotropy first decreases and then increases slowly. Results show the g-factor and its anisotropy in III-nitride QWs can be modulated by the well thickness, and they are greatly affected by the internal electric field and the quantum confined effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 403, 1 April 2016, Pages 81-85
Journal: Journal of Magnetism and Magnetic Materials - Volume 403, 1 April 2016, Pages 81-85
نویسندگان
Ming Li, Zhi-Bo. Feng, Libo Fan, Yilong Zhao, Hongpei Han, Tuanhui Feng,