کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1798401 | 1524821 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage](/preview/png/1798401.png)
چکیده انگلیسی
We studied the rectification function of microwaves in CoFeB/MgO-based magnetic tunnel junctions using voltage-induced ferromagnetic resonance (FMR). Our findings reveal that the shape of the structure of the spectrum depends on the rotation angle of the external magnetic field, providing clear evidence that FMR dynamics are excited by voltage-induced magnetic anisotropy changes. Further, enhancement of the rectified voltage was demonstrated under a DC bias voltage. In our experiments, the highest microwave detection sensitivity obtained was 350 mV/mW, at an RF frequency of 1.0 GHz and field angle of θH=80°, ÏH=0°. The experimental results correlated with those obtained via simulation, and the calculated results revealed the magnetization dynamics at the resonance state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 400, 15 February 2016, Pages 159-162
Journal: Journal of Magnetism and Magnetic Materials - Volume 400, 15 February 2016, Pages 159-162
نویسندگان
Yoichi Shiota, Shinji Miwa, Shingo Tamaru, Takayuki Nozaki, Hitoshi Kubota, Akio Fukushima, Yoshishige Suzuki, Shinji Yuasa,