کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1798498 | 1524823 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of perpendicular anisotropy of Ta-inserted double CoFeB/MgO interface MTJ's for STT-MRAM
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ta inserts in double magnetic tunnel junctions have been shown to induce perpendicular magnetic anisotropy. We fabricated the central layers of a CoFeB/MgO based double magnetic tunnel junction with a Ta insertion layer between the free layers of the magnetic tunnel junctions. The thickness of the Ta insert and CoFeB layer were varied from 0.5 to 1.1Â nm and 0.9 to 1.7Â nm respectively, to find which minimum thickness of Ta will induce perpendicular anisotropy in the MTJ. FMR studies were performed to measure the interfacial anisotropy Ku,i. We demonstrated that the most effective stack minimized the CoFeB thickness while maximizing the Ta thickness. This was balanced with the need to keep both CoFeB layers from decoupling or becoming magnetically dead.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 398, 15 January 2016, Pages 54-58
Journal: Journal of Magnetism and Magnetic Materials - Volume 398, 15 January 2016, Pages 54-58
نویسندگان
Billy D. Clark, Soumalya Paul, Samuel C. Schwarm, Amritpal Singh, Anusha Natarajarathinam, Subhadra Gupta,