Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain

• Magnetic anisotropy parameter in (Ga,Mn)As with a large epitaxial strain is determined.
• Extension of a linear magnetic anisotropy dependence on lattice mismatch up to 2% is presented.
• A linear dependence of magnetic anisotropy on magnetization is established.
• Magnetic anisotropy dependence on temperature is shown.
• Electrical transport measurements are successfully applied to study magnetic anisotropy.

Magnetic properties of 20 nm thick (Ga,Mn)As layer deposited on (Ga,In)As buffer with very large epitaxial tensile strain are investigated. Ga1−xInxAs buffer with x=30% provides a 2% lattice mismatch, which is an important extension of the mismatch range studied so far (up to 0.5%). Evolution of magnetic anisotropy as a function of temperature is determined by magnetotransport measurements. Additionally, results of direct measurements of magnetization are shown.