Intrinsic magneto-dielectric effect in the diluted magnetic ferroelectric fluoride BaMg1−xMnxF4 (0≤x≤0.07)

• BaMg1−xMnxF4 (x=0, 0.03, 0.05, 0.07) were prepared by the hydrothermal method.
• Inducing magnetism in BaMgF4 makes it suitable for future spintronics applications.
• The Mn ion doping in BaMgF4 induces antiferromagnetism at room temperature.
• The BaMg0.95Mn0.05F4 exhibits better antiferromagnetism and ferroelectricity.
• All the samples show uneven sized hexagonal and rectangular particle distribution.

BaMg1−xMnxF4 (0≤x≤0.07) samples were prepared by hydrothermal method which have heterogeneous particle size distribution with combined hexagonal and rectangular shapes. An isovalent Mn ion at Mg site induces antiferromagnetism at room temperature and the antiferromagnetic nature is confirmed by Arrott–Belov–Kouvel plot. Magnetization values taken at 15 kOe initially increases and then decreases with increase in the Mn concentrations. Undoped and doped samples show unsaturated ferroelectric loops with lossy nature and the lossy nature is found to decrease with increase in doping concentration. BaMg0.95Mn0.05F4 exhibits a stable resistivity behavior over the temperature range 350–650 K. Almost a flat response in dielectric properties is observed for all the samples at 100 kHz in the measured temperature range. The probable origin of magneto-dielectric effect is discussed based on the study at a frequency of 1 kHz at room temperature.