کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1798916 | 1524832 | 2015 | 4 صفحه PDF | دانلود رایگان |
• Combining NiFe with ZnO, thereby producing NiFe/ZnO interfaces.
• Investigating the effects of annealing temperatures on the magnetoresistance.
• Explaining the corresponding relationship between MR and microstructure.
Zinc oxide (ZnO) exhibiting many superior physical properties was inserted into the Ta/NiFe/Ta films as nano-oxide intercalations. Different annealing temperatures and ZnO thickness significantly affected the magnetoresistance (MR) in NiFe films. The 4-nm thick ZnO film annealed at 200 °C had a MR of 2.41%, which was more than 70% higher than that of the 1-nm thick ZnO annealed film (MR=1.40%). However, the further increase in annealing temperature to 300 °C rapidly deteriorated the MR performance of the films. Diffusion and interface reactions occur between the crystal ZnO and the adjacent NiFe layer. Lower-temperature annealing improved the interface, increasing the specular reflection of spin-polarized electrons to some extent. However, higher-temperature annealing induced severe diffusion and interface reactions, which led to a sharp decline in MR performance.
Journal: Journal of Magnetism and Magnetic Materials - Volume 389, 1 September 2015, Pages 1–4