Effect of Mn doping on structural and magnetic properties of GaFeO3

GaFe1−xMnxO3 polycrystalline materials have been prepared by a solid state reaction (SR) and by the sol–gel (SG) method. The maximum Mn content amounts up to 10% and 40% for SR and SG preparation, respectively. All compounds in these composition ranges crystallize in space group P c 21 n derived from Rietveld refinement of X-ray powder patterns. The gradual incorporation of manganese is accompanied by a decrease in the cell volume. The ferrimagnetic transition temperature of Tc=282 K for GaFeO3 decreases with Mn content and reaches Tc=149 K for x=0.4.

► Structural and magnetic properties of Mn doping multiferroic GaFeO3 were studied.
► The maximum Mn doped amounts is 40% for system prepared by the sol–gel method and annealed at 700 °C.
► A distortion is introduced into the crystal lattice of GaFeO3 by Mn substitution.
► The ferrimagnetic transition temperature of GaFe0.6Mn0.4O3 is 149 K.