کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1801079 | 1024558 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Minimal switching voltage for magnetization reversals in asymmetric nanorings
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Minimal switching voltage for magnetization reversals in asymmetric nanorings Minimal switching voltage for magnetization reversals in asymmetric nanorings](/preview/png/1801079.png)
چکیده انگلیسی
Micromagnetic simulations based on the Landau–Lifshitz–Gilbert equation are presented to study spin-polarized current induced magnetization switching in asymmetric nanoring-shaped magnetic tunnel junctions. The results show that in a nanoring with an intermediate eccentric distance S, the critical switching voltage VC reaches the minimum whose magnitude is less than half of the voltage for a symmetric nanoring. In addition to the spin-transfer torque, the current induced Ampère field is found to play a crucial part in the switching process. Analysis is given to explain the existence of such an energy valley that leads to the minimal voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 22, November 2009, Pages 3698–3701
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 22, November 2009, Pages 3698–3701
نویسندگان
Hui-Zhong Xu, Xiao Chen, Jing Hua, Jun-Ming Liu,