Spin polarization and spin-dependent transmittance in II-VI diluted magnetic semiconductorheterostructure

►The one-dimension Schrodinger and Poisson's equations is accurately resolved for spin-up and spin-down orientations of carriers coupled via the sp-d exchange interaction in Cd1-xMnxTe/CdTe/Cd1-xMnxTe diluted magnetic semiconductor based quantum well. ► The spin-up and spin-down are space separated from carriers in quantum well, their densities are band offsets dependent. ► In the ferromagnetic coupling the role of the CdTe layer in the rearrangement of the spins, while in the anti-ferromagnetic coupling, CdTe layer acts as a spin reversal. ► Layer parameters have important effect on the transmittance coefficients of spin-up and spin-down carriers and then on current. ► Results are useful key to evaluate the spin-dependent currents and design new devices based on Mn:II-VI DMS, like spin-resonant tunneling diodes or memories based on tunnel magneto resistance or giant magneto resistance effects.