Modeling of irreversible switching and viscosity phenomena in perpendicular thin films

We have developed a simple numerical model for simulating domains as well as remanence and viscosity curves in the slow dynamics regime, for thin films characterized by perpendicular magnetization and irregular domain configurations due to strong disorder. The physical system is represented as constituted of identical switching units, described by proper switching field distributions and energy barrier laws for pinning and nucleation processes. The model also includes an effective field which accounts for magnetic forces proportional to magnetization, on average. Simulations of DCD curves show that when the reversal of magnetization is governed by pinning, the coercive field depends on the physical size of the film area on which the external field is applied. In the case of viscosity phenomena described by a linear energy barrier law associated with a single predominant reversal process (pinning or nucleation), universal viscosity curves can be generated by properly transforming the DCD curve of the system. We also demonstrate that a reduction of the maximum viscosity coefficient can coexist with a reduction of the energy barrier heights.