کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1801865 | 1024582 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Observation of large magnetic resistance in weak magnetic fields using CuPt/SiO2/Si/SiO2/CuPt structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The magnetoresistive effect of CuPt(8 nm)/SiO2(5 nm)/Si(50,000 nm)/SiO2(5 nm)/CuPt(8 nm) structure made by e-beam evaporation technique is studied in this work. Variation in magnetoresistance obtained by I–V measurements at 77 K and in the presence of less than 5 mT magnetic field applied in parallel to the surface is investigated. We have found that this structure exhibit large magnetoresistance in low magnetic fields (i.e. <5 mT). Our results also indicate that the variation in magnetoresistance in the presence of external magnetic field has oscillatory behavior and has the maximum value of 3295%. This structure due to its high sensitivity to low magnetic fields can also be used as an active element in magnetic field sensor devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 18, September 2009, Pages 2733–2736
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 18, September 2009, Pages 2733–2736
نویسندگان
H. Hajghassem, A.R. Erfanian, S.M. Banihashemian, M.R. Aliahmadi, M. Mohtashamifar,