کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1801963 | 1024586 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hall effect and electronic structure of Co2FexMn1-xSi films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Hall effect and electronic structure of Co2FexMn1-xSi films Hall effect and electronic structure of Co2FexMn1-xSi films](/preview/png/1801963.png)
چکیده انگلیسی
Tunneling experiments have shown that in order to retain half-metallicity at room temperature not only a large gap is required but also a Fermi energy considerably distant from the minority band edges. We correlate the position of the Fermi energy in the spin minority gap obtained from band structure calculations to Hall effect experiments. As a model system we chose Co2FexMn1-xSi, where the Fermi energy was calculated to move from the valence band edge of the minority states to the conduction band edge with increasing x. On high quality laser ablated epitaxial films we observe a sign change of both the normal and the anomalous Hall effect with doping. The experimental data agree with band structure calculations done in the LSDA+DMFT scheme.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 322, Issue 6, March 2010, Pages 579-584
Journal: Journal of Magnetism and Magnetic Materials - Volume 322, Issue 6, March 2010, Pages 579-584
نویسندگان
H. Schneider, E. Vilanova Vidal, S. Chadov, G.H. Fecher, C. Felser, G. Jakob,