کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1802297 | 1024594 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ferromagnetism dependence on hole carriers in polycrystalline silicon films co-doped with Mn and B
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ferromagnetism dependence on hole carriers in polycrystalline silicon films co-doped with Mn and B Ferromagnetism dependence on hole carriers in polycrystalline silicon films co-doped with Mn and B](/preview/png/1802297.png)
چکیده انگلیسی
Polycrystalline Si0.96Mn0.04:B films were prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The films are ferromagnetic with Curie temperatures of about 250Â K. Through the approach of microwave plasma enhanced chemical vapor deposition, the films were treated by hydrogen plasma and boron plasma. After the plasma treatments, the structural properties of the films did not change, while both the saturation magnetization and hole concentration in the films changed. The correlation between the magnetic properties and the transport properties of the Si0.96Mn0.04:B films suggests that free hole carriers play an important role in Si:Mn diluted magnetic semiconductors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 24, December 2009, Pages 4103-4107
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 24, December 2009, Pages 4103-4107
نویسندگان
Liu Xingchong, Zhang Fengming,