کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1802910 | 1024607 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of indium incorporation in Zn1−xCoxO thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present paper, the preliminary investigations of a series of ZnO thin films co-doped with indium and cobalt with an objective to elucidate the correlation, if any, between the carrier concentration and the induced room temperature ferromagnetism (RTFM), are presented. The single-phasic (Zn99.5In0.5)1−xCoxO thin films are deposited by spray pyrolysis. The substitution of Zn2+ by Co2+ has been established by optical transmission analysis of these films. The films are ferromagnetic at room temperature; and the magnetization has higher value for indium and cobalt co-doped thin film as compared with Zn090Co0.1O thin film (having no indium).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 8, April 2009, Pages 966–970
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 8, April 2009, Pages 966–970
نویسندگان
Sujeet Chaudhary, Kanwal Preet Bhatti, D.K. Pandya, S.C. Kashyap, A.K. Nigam,