کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1802917 | 1024607 | 2009 | 8 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: The origin and control of the sources of AMR in (Ga,Mn)As devices The origin and control of the sources of AMR in (Ga,Mn)As devices](/preview/png/1802917.png)
We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analysed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5 nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [A.W. Rushforth, et al., Phys. Rev. Lett. 99 (2007) 147207] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of the spin–orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential.
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 8, April 2009, Pages 1001–1008