کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1803406 1024617 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers
چکیده انگلیسی
The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 321, Issue 15, August 2009, Pages L41-L44
نویسندگان
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