Magnetic and optical properties of Mn-implanted Si material

Si1−xMnx diluted magnetic semiconductors with x≈5% with a ferromagnetic structure were formed through Mn ion implantation and post-annealing. The temperature- and magnetic field-dependent magnetization were measured by magnetometry using a superconducting quantum interference device. The Si0.95Mn0.05 materials were found to be homogeneous, and to exhibit p-type conductivity and ferromagnetic ordering with a Curie temperature (TC) above room temperature. The low-temperature (T=10K) photoluminescence spectra exhibited Mn-related free-to-donor pair transitions for the Si1−xMnx materials with x≈5%. A Mn double-donor level in these samples was found to be Mn substituted for Si (MnSi) and located around 290 meV above the valence band, suggesting that the ferromagnetism observed in Mn-implanted Si material is hole-mediated ferromagnetism.