Thermally assisted writing for perpendicular MRAM

Spin valves composed of TbCo/CoFe/Cu/CoFe/TbFeCo were fabricated with perpendicular magnetization and GMR ratios of 4.5%. The (TbCo/CoFe) layers and (CoFe/TbFeCo) layers are referred to the free and the pinned layers, respectively. The compositions of two layers were chosen to have a lower Curie temperature (130 °C) but higher coercivity (13.2 kOe) of the free layer at room temperature than those of the pinned layer; therefore, the free layer is quite stable at room temperature but its magnetization can be easily switched at a relatively low temperature. Spin valves were patterned into 100-μm-wide cells and their coercivity was reduced with increasing writing current due to the temperature rise by current-heating. When the current density of the writing current was increased to 2.1×106 A/cm2, the required switching field for the free layer was only 10 Oe.