Fabrication of highly conductive Ru/a-CNx:H composite films by anode deposit

Ruthenium(0) composite hydrogenated amorphous carbon nitride (Ru/a-CNx:H) films were deposition on single crystal silicon (1 0 0) substrate by electrochemical deposition technique with acetonitrile as carbon source, and Ru3(CO)12 as dopant. In the deposited progress, the Si (1 0 0) acted as anode. The relative atomic ratio of Ru/N/C was about 0.28/0.33/1, and Ru nanocrystalline particles about 8 nm were homogeneously dispersed into the amorphous carbon matrix. After doping Ru into a-CNx:H films, the conductivity of the films were evidently improved and the resistivity drastically decrease from 108 Ω cm to about 100 Ω cm.