کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
182097 | 459416 | 2007 | 6 صفحه PDF | دانلود رایگان |

N-doped titania thin films were prepared by anodic oxidation of titanium sheets and subsequent heat treatment in the presence of urea pyrolysis products at 400 °C. The resulting films are modified predominantly at the surface. They exhibited a significant photocurrent response upon visible light irradiation inducing an incident photon-to-current efficiency of 1.5% at 400 nm. The flatband potential was anodically shifted by 0.2 V as compared to the unmodified film. Photocurrent transients revealed that nitrogen-centered intra-bandgap states, responsible for visible light response, induce also enhanced recombination as indicated by a cathodic “overshoot” after turning off the light. This recombination can be inhibited by the presence of iodide.
Journal: Electrochemistry Communications - Volume 9, Issue 4, April 2007, Pages 761–766