کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
182581 | 459432 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new approach to prepare highly loaded palladium
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, a simple procedure to prepare black-Pd films with a high H/Pd loading ratio is reported. The proposed methodology relies on a nonconventional H-source, the hypophosphite ion. Anomalous high loading ratios, H/Pd > 1, were found, however, it was concluded that the hyperstoichiometric hydrogen was independent of the H-source but was intrinsic to the surface properties of the prepared Pd-black film. Hydrogen loading was also determined from GIXRD analysis and a PdH0.79 stoichiometry was found. The atypical H/Pd loading ratio was attributed to H2 trapping by surface voids. The Pd-black film, prepared by a spontaneous deposition process, was characterized by cyclic voltammetry and AFM.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochemistry Communications - Volume 8, Issue 4, April 2006, Pages 647–652
Journal: Electrochemistry Communications - Volume 8, Issue 4, April 2006, Pages 647–652
نویسندگان
M. Cristina F. Oliveira,