کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
182644 | 459435 | 2007 | 5 صفحه PDF | دانلود رایگان |
In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS.
Journal: Electrochemistry Communications - Volume 9, Issue 3, March 2007, Pages 449–453