کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1842821 | 1031489 | 2007 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of topological defects and local curvature on the electronic properties of planar graphene
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
ریاضیات
فیزیک ریاضی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A formalism is proposed to study the electronic and transport properties of graphene sheets with corrugations as the one recently synthesized. The formalism is based on coupling the Dirac equation that models the low energy electronic excitations of clean flat graphene samples to a curved space. A cosmic string analogy allows to treat an arbitrary number of topological defects located at arbitrary positions on the graphene plane. The usual defects that will always be present in any graphene sample as pentagon–heptagon pairs and Stone–Wales defects are studied as an example. The local density of states around the defects acquires characteristic modulations that could be observed in scanning tunnel and transmission electron microscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Physics B - Volume 763, Issue 3, 19 February 2007, Pages 293–308
Journal: Nuclear Physics B - Volume 763, Issue 3, 19 February 2007, Pages 293–308
نویسندگان
Alberto Cortijo, María A.H. Vozmediano,