Lateral carrier confinement in InGaN quantum-well nanorods

We review our studies on lateral carrier diffusion in micro-fabricated samples of InGaN nanorods and their parent quantum wells. The carrier diffusion is observed to be strongly confined in nanorods, as manifested by the reduction in the delayed-rise component of time-resolved photoluminescence traces. We further argue that the confinement of carrier diffusion can be applied to suppress the efficiency droop related to defect state recombination and to assist in the energy transfer between InGaN nanorods and nanocrystal phosphors for color conversion.