Defect-induced transitions in synchronous asymmetric exclusion processes

The effects of a single local defect in synchronous asymmetric exclusion processes are investigated via theoretical analysis and Monte Carlo simulations. Our theoretical analysis shows that there are four possible stationary phases, i.e., the (low density, low density), (low density, high density), (high density, low density) and (high density, high density) in the system. In the (high density, low density) phase, the system can reach a maximal current which is determined by the local defect, but independent of boundary conditions. A phenomenological domain wall approach is developed to predict dynamic behavior at phase boundaries. The effects of defective hopping probability p on density profiles and currents are investigated. Our investigation shows that the value of p determines phase transitions when entrance rate α and exit rate β are fixed. Density profiles and currents obtained from theoretical calculations are in agreement with Monte Carlo simulations.