کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1862502 1037591 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reproducible resistive switching effect for memory applications in heterocontacts based on strongly correlated electron systems
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Reproducible resistive switching effect for memory applications in heterocontacts based on strongly correlated electron systems
چکیده انگلیسی

The transitional processes in heterocontacts based on strongly correlated electron systems (SCES) are studied for analyzing of the effect of resistive switching (ERS). It has been shown that the process is asymmetric with respect to switching into “on” and “off” states, the switching time is controlled by a voltage level, this time can be less than microseconds, on the other hand, relaxation processes can reach tens seconds. The switching is controlled by two processes: a change in the resistance state of the normal metal/SCES interface under effect of electric current field and by electrodiffusion of oxygen to vacancies, at that the doping level of the contact area and resistive properties of the heterocontact change. In particular, electrodiffusion of mobile oxygen induced by the electric field makes it possible to use a device with ERS as a memristor. On the other hand, a possibility to control the switching time and ON and OFF parameters show the possibilities to use these devices as memory elements “RAM”.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 372, Issue 44, 27 October 2008, Pages 6681–6686
نویسندگان
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