کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1862769 | 1645441 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and PL of Al-doped gallium nitride nanowires
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication and PL of Al-doped gallium nitride nanowires Fabrication and PL of Al-doped gallium nitride nanowires](/preview/png/1862769.png)
چکیده انگلیسی
Mass Al-doped GaN nanowires with an average diameter of about 50 nm and lengths up to several millimeters are fabricated by a CVD approach. The as-fabricated products have a single crystal phase and grow along the 〈001〉〈001〉 direction. The growth of Al-doped GaN nanowires is suggested for quasi-vapor-solid mechanism (QVSM). In particular, for as large-scale GaN nanowires, a novel strong ultraviolet PL spectrum (from 3.3 to 3.7 eV) appears with a doping Al where the Al-doped GaN nanowires are found to be responsible for the different characteristics; the PL mechanism is explained in detail.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 357, Issues 4–5, 18 September 2006, Pages 374–377
Journal: Physics Letters A - Volume 357, Issues 4–5, 18 September 2006, Pages 374–377
نویسندگان
Shao-Min Zhou,