Optical bistability in a triple semiconductor quantum well structure with tunnelling-induced interference

We study the behavior of optical bistability (OB) in a triple semiconductor quantum well structure with tunnelling-induced interference, where the system is driven coherently by the probe laser inside the unidirectional ring cavity. The results show that we are able to control efficiently the bistable threshold intensity and the hysteresis loop by tuning the parameters of the system such as laser frequency and tunnelling-induced frequency splitting. This investigation can be used for the development of new types of nanoelectronic devices for realizing switching process.