کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1863012 | 1037624 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction](/preview/png/1863012.png)
چکیده انگلیسی
Spin-polarized transports of relativistic electrons through graphene-based ferromagnet/insulator/ferromagnet (FG/IG/FG) single junctions have been investigated theoretically. Large oscillating tunnel magnetoresistance (TMR) has been found in monolayer and bilayer FG/IG/FG junctions. The oscillating amplitudes of TMR do not decrease with the increase of the thickness and the height of barrier, in contrast to the exponential decay in conventional ferromagnet/insulator/ferromagnet single junction. The physical origin for such a phenomenon has also been analyzed. It is anticipated to apply such a phenomenon to design the spin-polarized electron device based on the graphene materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 372, Issue 5, 28 January 2008, Pages 725–729
Journal: Physics Letters A - Volume 372, Issue 5, 28 January 2008, Pages 725–729
نویسندگان
Chunxu Bai, Xiangdong Zhang,