Studies on the reset power needed for the unipolar resistive switching in amorphous SrTiO3 − δ films induced by electrical pulse

Unipolar resistive switching characteristics induced by electrical pulse have been investigated based on the sandwiched Pt/amorphous SrTiO3−δ(α-STO)/PtSrTiO3−δ(α-STO)/Pt memory cells. The conduction mechanisms at HRS and LRS were attributed to the Poole–Frenkel emission and the joule heating effects. The relationship between the power needed for switching off the cell (PRPR) and the compliance current, the size of the electrode and the resistance at LRS were examined. The relationship between PRPR and the resistance value RLRL at LRS can be fitted by the formula of PR∝RL−γ.

► Amorphous STO film with homogeneous structure without grain boundaries was studied.
► The resistive switching performance was induced by electrical pulse.
► The conduction mechanisms at HRS and LRS were Poole–Frenkel emission and joule heating effects.
► The relationship between PRPR and the compliance current, the size of the electrode and RLRL were examined.
► The relationship between PRPR and RLRL at LRS can be fitted by the formula of PR∝RL−γ.