Fabrication and photoluminescence properties of highly ordered ZnS nanowire arrays embedded in anodic alumina membrane

ZnS nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated from an electrolyte containing ZnCl2 and elemental S in dimethylsulfoxide. Photoluminescence (PL) measurements show a broadband with three peaks centered at about 353, 425, and 520 nm that are attributed to vacancies or interstitial, sulfur vacancy, and point defects respectively.