کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1863935 1037692 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Tunneling conductance in a gapped graphene-based superconducting structure: Case of massive Dirac electrons
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Tunneling conductance in a gapped graphene-based superconducting structure: Case of massive Dirac electrons
چکیده انگلیسی
The tunneling conductance in a NG/SG graphene junction in which the graphene was grown on a SiC substrate is simulated. The carriers in the normal graphene (NG) and the superconducting graphene (SG) are treated as massive relativistic particles. It is assumed that the Fermi energy in the NG and SG are EFN∼400 meV and EFS∼400 meV+U, respectively. Here U is the electrostatic potential from the superconducting gate electrode. It is seen that the Klein tunneling disappears in the case where a gap exist in the energy spectrum. As U→∞, the zero bias normalized conductance becomes persistent at a minimal value of G/G0∼1.2. The normalized conductance G/G0 is found to depend linearly on U with constant slope of α=2/(EFN−mvF2)∼7.4, where 2mvF2 is the size of the gap Δ opening up in the energy spectrum of the graphene grown on the SiC substrate. It is found that G/G0≅2+αU for potentials in the range −270 meV
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 373, Issue 38, 14 September 2009, Pages 3477-3482
نویسندگان
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