کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1864445 | 1037731 | 2014 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Band engineering of dichalcogenide MX2 nanosheets (M = Mo, W and X = S, Se) by out-of-plane pressure Band engineering of dichalcogenide MX2 nanosheets (M = Mo, W and X = S, Se) by out-of-plane pressure](/preview/png/1864445.png)
• The electronic structures of nanosheets under out-plane pressure were investigated.
• Band gap closes faster in the Mo-containing nanosheets than in the W-containing ones.
• Charge accumulation in the interlayer region is responsible for the band gap closing.
The electronic structures of the two-dimensional transition-metal dichalcogenide nanosheets under different out-of-plane pressure were investigated by using the first principle calculations. The band-gaps of all the nanosheets (thickness = 2, 4 and 6 layers) decrease with increasing pressure and finally close, indicating a semiconductor–metal transition. The critical pressure for the semiconductor–metal transition is larger for the thinner nanosheets, and the band-gap closes faster for the Mo-containing nanosheets than the W-containing ones. By taking bilayer MoS2 as an example, it was found that the physical mechanism of the band-gap variation relates to the charge accumulation and delocalization in the interlayer region.
Journal: Physics Letters A - Volume 378, Issue 9, 7 February 2014, Pages 745–749