Two-dimensional electromechanical single electron transistor in strong dissipative structure

A two-dimensional model system of an electromechanical single electron transistor with strong dissipation is investigated by using Monte Carlo method. The island vibrates not only between the drain electrode and the source electrode, but also between the gate electrode and the back-gate electrode. A simple and effective method is applied to estimate the trend of the current curves, by analyzing the average electrostatic forces.