Quantum interference effect in single disordered silver nanowires

Electron transport properties of single Ag nanowires sheathed by an insulated amorphous layer have been studied. The electrodes were fabricated by focused ion beam induced Pt deposition, and the surface insulated layer was destroyed by the ions. Thus, well contacts were made between the electrodes and the inner Ag nanowire. At the same time, disorders may also be introduced into the nanowire due to the ion irradiation. The temperature dependence of resistivity indicates that the electron transport mechanism transforms from classical electron–phonon scattering to interference between electron–phonon-impurity scattering, and to electron–electron interaction as the temperature decreases gradually from room temperature to 2 K. At 2 K, a positive magnetoresistance was observed, which is ascribed to the electron–electron interaction combined with spin–orbit scattering. Moreover, it is found that the resistivity decreases with increasing voltage, and the corresponding mechanisms were discussed.