کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1865878 | 1037888 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1 − xAlxAs double quantum well under the external fields
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1 − xAlxAs double quantum well under the external fields The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1 − xAlxAs double quantum well under the external fields](/preview/png/1865878.png)
چکیده انگلیسی
The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in GaAs/Ga0.7Al0.3As double quantum well in the presence of the electric and magnetic fields which are applied along the growth direction have been studied by using a variational technique within the effective-mass approximation. The results show that an increment in temperature results in a decrement in donor impurity binding energy while an increment in the pressure for the same temperature enhances the binding energy and the pressure effects on donor binding energy are lower than those due to the magnetic field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 373, Issue 1, 22 December 2008, Pages 140–143
Journal: Physics Letters A - Volume 373, Issue 1, 22 December 2008, Pages 140–143
نویسندگان
E. Kasapoglu,