کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1865954 1037901 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots
چکیده انگلیسی
Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 372, Issue 42, 13 October 2008, Pages 6420-6423
نویسندگان
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