Piezomodulated and photomodulated reflectivity study of strained InxGa1-xAs/GaAs single quantum well

Signatures associated with electronic states confined in two strained InxGa1-xAs/GaAs single quantum wells have been observed in its piezomodulated (PzR) and photomodulated (PR) reflectivity spectra. One comparison of the relative intensity between 11H and 11L signatures in PzR of GaAs/In0.14Ga0.86As SQW emphasizes the contribution of strain dependence of energies of the confined states; the other comparison of corresponding confined states between PzR and PR spectra in both samples has been introduced to interpret the discrepancy of the relative intensity in term of modulated strength, and the calculated ratio of energy shifts ΔEs induced by strain to that of ΔEe produced by surface electric field agree with the experimental observation.