Dispersion coefficients for the interaction of Cs atom with different material media

• C3C3 coefficients for Cs atom in 6s state with various surfaces are determined.
• C3C3 coefficients are found to be highest for perfect conductor and least for SiO2.
• Calculated polarizability is in good agreement with previous results in literature.
• Dielectric permittivity for all the considered surfaces is shown graphically.
• The retardation function f3f3 is highest for SiNx.

Motivated by a large number of applications, the dispersion (C3C3) coefficients for the interaction of a Cs atom with different material media such as Au (metal), Si (semiconductor) and various dielectric surfaces like vitreous SiO2, SiNx, sapphire and YAG are determined using accurate values of the dynamic polarizabilities of the Cs atom obtained employing the relativistic coupled-cluster approach and the dynamic dielectric constants of the walls. Moreover, we also give the retardation function in the graphical representation as functions of separation distances to describe the interaction potentials between the Cs atom with the above considered material media. For the easy access to the interaction potentials at a given distance of separation, we give a simple working functional fitting form for the retardation functions in terms of four fitting parameters that are quoted for the respective medium.