Influence of Kr doping on neon soft X-rays emission in fast miniature plasma focus device

• Influence of high-Z doping on SXR emission in 235 J PF device is reported.
• Influence of krypton doping on vital pinching characteristics is investigated.
• Numerical simulation and time-resolved imaging was performed to validate results.
• 1% Kr addition to Ne increased the SXR yield by about 30%.
• Optimum pressure yielding maximum SXR fluence at source may be different from that at the target position.

An investigation on the possibility of enhancement of soft X-ray (SXR) (900–1600 eV) emission from a fast miniature plasma focus (FMPF) device of 235 J (at 14 kV) storage energy through doping of operating gas was performed. Neon (Ne), the operating gaseous medium, was doped with krypton (Kr) in different volumetric ratios at various operating pressures ranging from 2 to 14 mbar. The 1% Kr doping increased the average optimum SXR emission efficiency from 0.47% to 0.6% without enhancing the hard X-ray (HXR) (>1600 eV) emission. The Kr doping influenced the major pinching characteristics such as focusing efficiency and time to pinch with consequential effect on X-ray emissions. Synchronous operation of the 4 pseudo-spark gap (PSG) switches was mandatory for efficient discharge current delivery to the electrodes. A drastic improvement in the pinching efficiency was obtained with replacement of old and worn out PSG switches with the new ones. Optical imaging of current sheath dynamics was performed using gated ICCD camera to verify the normal operation of the device after the PSGs replacement. A numerical simulation analysis on the 2 cm long stainless steel tapered anode, used in this study, was done to predict the maximum SXR emission efficiency and the peak operating gas pressure. An analysis on the amount of SXR fluence generated at the source position and the proportion of it reaching the target position is also reported.