کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1866973 1038120 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Band hybridization effect in InAs/GaSb based quantum wells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Band hybridization effect in InAs/GaSb based quantum wells
چکیده انگلیسی

We develop a simple way to investigate the band hybridization effect in the present of the many-body interactions in an InAs/GaSb based quantum wells with different widths. The exchange self-energy and energy gap are obtained analytically at the long wave limit. An electron-like and a hole-like dispersion relations were obtained and a minigap about several meV is observed at the intercross of the electron and hole dispersion relations. Our theoretical results show that the widths of the quantum well have crucial role on the band hybridization in such a system.


► The band hybridization effect induced by many body interactions is investigated analytically in an InAs/GaSb based type II and broken-gap quantum well system.
► A minigap about several meV is obtained at the intercross of the electron and hole dispersion relations.
► The hybridization effect is determined by the widths of different material layers in the quantum well.
► Our analytical results can give a deeper physical understanding of the band hybridization in InAs/GaSb based type II and broken-gap QW systems.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 377, Issue 9, 15 March 2013, Pages 727–730
نویسندگان
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