کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1867225 1038229 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Strain-induced metal to semiconductor transition in ultra-small diameter single-wall carbon nanotubes
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Strain-induced metal to semiconductor transition in ultra-small diameter single-wall carbon nanotubes
چکیده انگلیسی

Under a large tensile strain near fracture limit, the band structures of single-wall carbon nanotubes (SWCNTs) with diameter less than 0.5 nm begin a metal to semiconductor transition and these ultra-small SWCNTs can normally maintain their metallicities. The band gap behavior of these SWCNTs intrinsically originates from the long axial direct bond lengths and the severe curvature. The gap opening comes mainly from the transfer of pπpπ electrons. And the localized π and σ states can result in a lower electrical conductivity. This band gap behavior suggests that it has potential to find applications in nano-electromechanical system.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 375, Issue 8, 21 February 2011, Pages 1200–1204
نویسندگان
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