کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1867385 | 1038268 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells](/preview/png/1867385.png)
چکیده انگلیسی
Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor quantum well are investigated. We have found that the increase of the laser-dressing parameter leads to important effects on the electronic and optical properties of a quantum well. This gives a new degree of freedom in various device applications based on the intersubband transition of electrons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 374, Issue 29, 28 June 2010, Pages 2980–2984
Journal: Physics Letters A - Volume 374, Issue 29, 28 June 2010, Pages 2980–2984
نویسندگان
F. Ungan, U. Yesilgul, S. Şakiroğlu, E. Kasapoglu, H. Sari, I. Sökmen,