کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1867385 1038268 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
چکیده انگلیسی

Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor quantum well are investigated. We have found that the increase of the laser-dressing parameter leads to important effects on the electronic and optical properties of a quantum well. This gives a new degree of freedom in various device applications based on the intersubband transition of electrons.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 374, Issue 29, 28 June 2010, Pages 2980–2984
نویسندگان
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