کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1867462 1530621 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structures and magnetic properties of Zn-doped colossal magnetoresistance materials Fe1−xZnxCr2S4
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Electronic structures and magnetic properties of Zn-doped colossal magnetoresistance materials Fe1−xZnxCr2S4
چکیده انگلیسی
The electronic structures and magnetic properties of Fe1 − xZnxCr2S4 (x=0.0,0.5,0.75,1.0) have been studied within the generalized gradient approximation (GGA) and GGA+U schemes. The calculated results reveal that with increasing Zn content the cell volume shrinks slightly; the system changes from ferrimagnetism to antiferromagnetism. The materials were found to be semiconductor in the compositional range of 0⩽x⩽0.5 and insulator in 0.75⩽x⩽1.0. Our calculations reveal that the semiconducting ground state for FeCr2S4 is both the Jahn-Teller effect and the Coulomb correlation effect. The calculated results for the magnetic phase transition are in a good agreement with experiments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 374, Issues 13–14, 29 March 2010, Pages 1555-1559
نویسندگان
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