Energy spectra of electron yields from silicon: Theory and experiment

In order to simulate the energy deposited of low energy electrons in a solid state silicon detector, a detailed Monte Carlo technique has been applied to describe electron scattering processes from silicon in the keV and sub-keV electron energy range. However, the precision on the energy deposited depends strongly on the accuracy of the energy of the total backscattered electrons. Thus, accurate models are needed to simulate the energy spectra of primary, secondary and Auger electron yields. In the present Letter, we show that the inclusion of ionizations, excitations, secondary electron generation, relaxations and Auger emissions provide a better description of the experimental measurements.