کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1868785 1530949 2015 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Doping-induced States in the Single-particle Spectrum Originating from Magnetic Excitation of a Mott Insulator
ترجمه فارسی عنوان
دولتی ناشی از دوپینگ در یک طیف تک ذرات ناشی از اختراع مغناطیسی یک مقره مقطع
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
چکیده انگلیسی

By infinitesimal doping of a Mott insulator, states are induced in the Mott gap in the single- particle spectrum. To clarify the nature of these states, their relationships with the magnetically excited states of the Mott insulator are investigated. By using the commutator between the Hamiltonian and an electron creation operator of the t-J model, it is shown that the doping- induced states generally have considerable overlaps with the magnetically excited states of the Mott insulator. In addition, the electron-addition spectral weight of spin-1 states from the spin- 1/2 ground state is shown to be three times as large as that of spin-0 states in the t-J model. These results imply that the doping-induced states in the small-doping limit of a continuous Mott transition can generally be interpreted as essentially the magnetically excited states of the Mott insulator which exhibit the momentum-shifted magnetic dispersion relation primarily outside the free-electron Fermi surface in the electron-addition spectrum following the doping. This picture is supported by numerical results for the one- and two-dimensional t-J models.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Procedia - Volume 75, 2015, Pages 206-213