Hole Doping Effects on Physical Properties of the Layered Antiferromagnetic Insulator (LaO)MnPn (Pn=P, As, Sb)

We have investigated an insulating origin of the layered Mn oxypnictide (LaO)MnPn with half-filled Mn 3d bands by choosing pnictogen atoms from P to Sb and introduction of hole carriers. Metallic states are found in (LaO)MnAs and (LaO)MnSb at higher hole doping.