Electron-electron Interactions in Highly Doped Heterojunction

We report results from calculations of temperature-dependent intra and intersubband electron-electron scattering rates in two subbands in a two-dimentional (2D) quantum structure in Random Phase Approximations (RPA). Electron-electron interactions in a single highly doped heterojunction are considered taking into account both intra- and intersubband transitions. Expressions are derived for the time of electron-electron interaction, matrix elements of the full screening potential and dynamic dielectric function in a 2D electron system with the fine structure of the energy spectrum, and for the electron density spatial distribution. The theoretical dependences provide a good description of the experimental times of Landau levels collisional broadening.